Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
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| P/N | VRRM [V] | Io [A] | IFSM [A] | IR [mA] | VFM [V] | @IFM [A] | Outline No. | Operating Temp Range | Circuit | Weight (grams) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|
| NA05HSA08 | 80 | 5.0 | 120.0 | 0.100 | 0.70 | 5.0 | NA(DO-221BC) | -40°C to 150°C | Single | 0.030 | |
| NA03HSA08 | 80 | 3.0 | 80.0 | 0.100 | 0.70 | 3.0 | NA(DO-221BC) | -40°C to 150°C | Single | 0.030 | |
| ME03EA06 | 60 | 3.0 | 60.0 | 0.200 | 0.57 | 3.0 | SOD-128 | -55°C to 150°C | Single | 0.034 | |
| ME01EA06 | 60 | 1.0 | 18.0 | 0.100 | 0.58 | 1.0 | SOD-128 | -55°C to 150°C | Single | 0.034 | |
| UCQ30A03 | 30 | 30.0 | 230.0 | 1.500 | 0.50 | 15.0 | TO-263LP | -40°C to 150°C | | 0.590 | |
| NA03HA20 | 200 | 3.0 | 110.0 | 1.000 | 0.90 | 3.0 | NA(DO-221BC) | -40°C to 150°C | Single | 0.030 | |
| UCHD30A09 | 90 | 30.0 | 250 | 0.100 | 0.79 | 15.0 | TO-263LP | -40°C to 150°C | 0.590 | ||
| MA10EA06 | 60 | 10.0 | 200 | 0.600 | 0.56 | 10.0 | DO-221BC | -55°C to 150°C | 0.037 | ||
| MA10XA10 | 100 | 10.0 | 130.0 | 0.300 | 0.73 | 10.0 | DO-221BC | -55°C to 150°C | 0.037 |
