Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
KYOCERA AVX SMxJ Series Transient Voltage Suppression (TVS) Diodes are designed in a common format of general purpose transient voltage suppression diodes. They are based on low leakage, high reliability glass passivated chip rectifier technology. These TVS diodes are industry standard components with three peak power ratings – 400W, 600W, and 1500W. They feature flat clamping characteristics, unidirectional or bidirectional polarity, and very fast response times.